Research Article

Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect

Table 1

DC simulation results and doping condition of different devices.

ConditionLDD4 toLDD1 LDD2 LDD3 LDD4 BreakdownThreshold
Poly (um)Dose (cm−2)Dose (cm−2)Dose (cm−2)Dose (cm−2)voltage (V)voltage (V)(ohmmm)(mA/mm)

ANA1.8E+128.0E+11NANA70.151.2513.25177
B2.21.8E+128.0E+11NA6.0E+1170.761.2612.83179.7
C2.21.8E+128.0E+11NA1.0E+1270.551.2612.77180.3
D2.21.8E+128.0E+11NA1.4E+1271.411.2612.52182.5
E2.21.7E+127.0E+115.0E+111.0E+1271.521.2612.21183.2
F2.21.7E+127.0E+117.0E+111.0E+1270.751.2611.87185
G2.21.7E+128.0E+117.0E+111.0E+1270.251.2611.62189.6
H21.8E+128.0E+11NA1.0E+1270.151.2612.62181.2
I2.41.8E+128.0E+11NA1.0E+1270.511.2612.99178.1