Research Article
Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs
Figure 1
(a) Typical structure of 14 nm NMOS FDSOI device featuring a gate stack TiN on bilayer oxide HfSiON + SiON with Si channel and P-Well substrate. (b) Two-dimensional bilayer FDSOI structure.
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