Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

Figure 1

(a) Typical structure of 14 nm NMOS FDSOI device featuring a gate stack TiN on bilayer oxide HfSiON + SiON with Si channel and P-Well substrate. (b) Two-dimensional bilayer FDSOI structure.

(a)

(b)