Research Article
Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs
Figure 3
Numerical calculation results of RCS factors for (a) front gate interface, and (b) back gate interface, versus front gate voltage VFG, for various effective gate lengths, and fixed W = 1 μm, with VBG = 0 V and Vd = 20 mV.
| (a) |
| (b) |