Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

<div>Ratio <i>R</i><sub>1</sub> of contribution of the front interface noise level to the total noise level in the case of front channel conduction mode: (a) CNF+Δ<i>r</i> model and (b) CNF + CMF + Δ<i>r</i> model.</div>

Active and Passive Electronic Components

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Figure 9

Figure 9: Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs 