M.  Wolf

The Influence of Air-Abrasive Trimming on the Current Noise of Thick Film Resistors

In this paper are presented design and performance data on microwave Y&#8211;circulators and Gunn oscillators produced in thick-film technology. Y&#8211;circulators have been designed for central frequencies of 3, 5, and 10 GHz with a satisfactory accuracy. New Polish made ferrite substrates, G&#8211;32, G&#8211;84 K, and G&#8211;175 have been used.The Gunn oscillator was designed and corrected to the resonant frequencies 3, 5 and 6 GHz based on the integrated package diodes CXYP &#8211; 43 A and BXYP &#8211; 45 C (made in Poland). The results of the investigations are presented in tabular and graphical form.

Janusz J. Gondek

Jan  Koprowski

Marek A. W&#243;jcicki

Thick-Film Non-Reciprocal Ferrite Elements and Gunn Hybrid Oscillators in Modified Thick-Film Technology

The effect of the water content of several electrolytic solutions on their ability to form dielectric oxide films on aluminum was examined. Anhydrous electrolytes were found to be incapable of forming such films, but the addition of small amounts of water made it possible for these solutions to perform as normal oxide-film formers. The anodizing behavior of an anhydrous electrolyte composed of methyl cellosolve and ammonium picrate was investigated in detail in both experimental aluminum anodizations and in finished capacitors, in an attempt to correlate the behavior of the electrolyte as an anodizer of bare foil with the aging and life test characteristics of capacitors containing that electrolyte. The results tend to support the conclusion that water is essential to the proper performance of electrolytic capacitors.

Walter J. Bernard

Steven M. Florio

The Oxide-Forming Role of Water in Aluminum Electrolytic Capacitors

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10)
have been produced on alumina <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mrow><mml:mo>[</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mtext>Al</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mtext>O</mml:mtext><mml:mn>3</mml:mn></mml:msub></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow><mml:mrow><mml:mo>&#x00B7;</mml:mo><mml:mn>96</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mtext>MgO</mml:mtext></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow><mml:mrow><mml:mo>&#x00B7;</mml:mo><mml:mn>04</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>]</mml:mo></mml:mrow></mml:mrow></mml:math> substrates. The temperature coefficient of resistivity
(TCR) of these films has been measured for different particle size and concentration (weight
percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03B1;</mml:mi></mml:math> and
hopping parameter <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03B2;</mml:mi></mml:math> were determined. These results suggest that hopping is important for the low concentration
films. For films with positive TCR only parameter <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03B1;</mml:mi></mml:math> could be determined. The parameter
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03B1;</mml:mi></mml:math> increased but the parameter <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03B2;</mml:mi></mml:math> decreased with temperature for the present films.

N. C. Halder

R. J. Snyder

Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films

The rapid growth of integrated circuit technology, culminating in VLSI circuits, is responsible for the proliferation of new, surface mountable device packages with large numbers of input-output terminals. Conventional printed circuit or multilayer techniques have been driven to the technological edge in the effort to interconnect these new types of packages. Because the etched conductors can be replaced with fine, insulated wires, automated high density discrete wiring techniques can provide easier high density interconnections and with shorter turn-around times. Among the dozen or so presently available discrete wiring techniques, the fastest growing is Multiwire&#174;. Multiwire is a computer based design and manufacturing system, where special machines are precisely laying down polyimide insulated
wires over adhesive coated substrates having etched power and ground planes. The finished boards exhibit microstrip characteristics, providing impedance control for high speed applications. The manufacturing process and Multiwire board performance capabilities are described in this paper.

G.  Messner

P.  Plonski

A.  Martens

Wire Laying Methods as an Alternative to Multilayer PCB&#39;s

The techniques for the generation of fine lines on rigid and flexible printed circuit boards are reviewed, and it is shown how the tracking on the interconnect can be made to match the requirements of chip carriers, TAB chips or beam leaded or wire bonded chips directly mounted.The use of fine line techniques on planar substrates can be adapted to provide a low cost, high density interconnect which offers a truly three dimensional connection capability without the use of a &#8220;back wiring panel&#8221;. Such a three dimensional interconnect can offer opportunities for improvement in the removal of heat from high dissipation chips, thus offering significantly increased reliability.

J. A. Scarlett

Fine Lines in a Three Dimensional Interconnect

The mid-filmR process has been developed to combine the photolithographic capability of thin film technology and the low cost, non-vacuum processing of thick film technology. In this paper, we present results on the characterization of mid-film gold for multilayer applications. The effects of various processing parameters on the properties of the conductor were investigated to establish optimum processing conditions on alumina and dielectric-coated alumina substrates. The use of a resin thickness in the range from 5 &#956;m to 15 &#956;m and firing temperatures from 750&#8451; to 1000&#8451; produced conductor lines with sheet resistances less than 4 m<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mtext>&#x03A9;</mml:mtext><mml:mo>/</mml:mo><mml:mo>&#x25A1;</mml:mo></mml:mrow></mml:math>, and with adhesion strengths capable of with-standing
a pull force of 2.3 Kg exerted on a 2.03 mm &#215; 1.03 mm area. The conductor lines exhibited
stable resistances upon several firings at 920&#8451;. The ultrasonic bondability of 25 &#956;m (1 mil) aluminum wire to the mid-film gold was observed to withstand pull forces of 7.3 &#177; 1.5 g before breaking the bond. In addition, it was confirmed that the resolution limit of the mid-film conductor is 50 &#956;m for
line widths and spaces. Furthermore, the prototype fabrication of a multilayer memory package has been successfully demonstrated using a combination of both mid-film and thick film processes. The finished packages were free of electrical shorts and conductor discontinuities and the resistance of the mid-film conductor lines was well within the required design specifications.

R.  Sue

H. M. Naguib

Mid-Film Interconnects for Multilayer Microcircuit Packages

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components