This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the <i  >f<sub>T</sub></i>-BV<sub  >CEO</sub> tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the <i  >f<sub>T</sub></i> values at high injection levels.

Pierre-Marie Mans

Sebastien Jouan

Sebastien Fregonese

Benoit Vandelle

Denis Pache

Caroline Arnaud

Cristell Maneux

Thomas Zimmer

SiGe HBTs Optimization for Wireless Power Amplifier Applications


		The potential utilization of RF signals for DC power is experimentally investigated. The aim of the work is to investigate the levels of power that can be harvested from the air and processed to achieve levels of energy that are sufficient to charge up low-power electronic circuits. 
The work presented shows field measurements from two selected regions: an urbanized hence signal congested area and a less populated one.  An RF harvesting system has been specifically designed, built, and shown to successfully pick up enough energy to power up circuits. The work concludes that while RF harvesting was successful under certain conditions, however, it required the support of other energy harvesting techniques to replace a battery. Efficiency considerations have, hence, placed emphasis on comparing the developed harvester to other systems.

Soudeh Heydari Nasab

Mohammad Asefi

Lutfi Albasha

Naser Qaddoumi

Investigation of RF Signal Energy Harvesting

This paper investigates the transition frequencies (<svg style="vertical-align:-2.89124pt" id="M1" height="13.0875" version="1.1" viewBox="0 0 27.5625 13.0875" width="27.5625"  xmlns="http://www.w3.org/2000/svg"    >
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				<tspan style="font-size: 11.21px; " x="0" y="0">𝑓</tspan>
			</text>

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				<tspan style="font-size: 7.85px; " x="4.7860599" y="0">a</tspan>
				<tspan style="font-size: 7.85px; " x="8.2696838" y="0">n</tspan>
				<tspan style="font-size: 7.85px; " x="12.192684" y="0">s</tspan>
			</text>

		</g>
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</svg>) of an
inductively terminated CMOS source follower buffer for negative
resistance behavior at which the effective shunt resistance
looking into the source of the buffer cell changes sign. Possible limiting frequencies of oscillation are determined based on resonators formed by a grounded gate inductor and a parasitic capacitance at the gate of the negative resistance buffer cell. The range of frequencies of oscillation of this negative resistance buffer cell  for variations in the different circuit parameters/elements is explored. Following this, a millimeter wave (MMW) oscillator is simulated using the IBM 130&#x2009;nm CMOS process technology which can operate at  70&#x2009;GHz. High-frequency MOSFET model was used for these simulations. The cell had an extremely low power dissipation of under 3&#x2009;mW. Extensive Monte Carlo simulations were carried out  for manufacturability analysis considering up to 50&#x25; variation in process and geometrical parameters, supply voltage, and ambient temperature. Noise analysis and a simulated  estimate of  the phase noise in an MMW LC VCO application is also reported.

S. M. Rezaul Hasan

Transition Frequencies and Negative Resistance of Inductively Terminated CMOS Buffer Cell and Application in MMW LC VCO

We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak
to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect
Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of
integration calculated from Taylor polynomials of inverse functions. The solution is presented
analytically wherever possible, and the integration is made from simple numerical methods
(Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-program
or in usual mathematical software. The transconductance and the diffusion current are also
calculated with the same model.

Hugues Murray

Patrick Martin

Serge Bardy

Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral

This paper introduces a novel voltage-mode multifunction biquadratic filter with single input and four outputs using two plus-type differential difference current conveyors (DDCCs) and four grounded passive components. The filter can realize inverting highpass, inverting bandpass, noninverting lowpass, and noninverting bandpass filter responses, simultaneously. It still maintains the following advantages: (i) using grounded capacitors attractive for integration and absorbing shunt parasitic capacitance, (ii) using grounded resistors at all <svg style="vertical-align:-0.0pt;width:13.5875px;" id="M1" height="11.175" version="1.1" viewBox="0 0 13.5875 11.175" width="13.5875" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path id="x1D44B" d="M775 650l-6 -28q-60 -6 -81.5 -16t-61.5 -54l-175 -191l125 -243q30 -58 48.5 -71t82.5 -19l-5 -28h-275l7 28l35 4q31 4 37 12t-6 34l-108 216q-140 -165 -177 -219q-16 -22 -10.5 -30.5t41.5 -13.5l22 -3l-7 -28h-244l8 28q52 4 75 15.5t67 52.5q48 46 206 231&#xA;l-110 215q-26 51 -44 63t-72 17l6 28h250l-6 -28l-27 -4q-30 -5 -35 -10t3 -27q17 -43 95 -190q70 78 154 185q15 21 10 29.5t-33 12.5l-30 4l5 28h236z" /></g></svg>
 terminals of DDCCs suitable for the variations of filter parameters and absorbing series parasitic resistances at all <svg style="vertical-align:-0.0pt;width:13.5875px;" id="M2" height="11.175" version="1.1" viewBox="0 0 13.5875 11.175" width="13.5875" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,11.113)"><use xlink:href="#x1D44B" /></g></svg> terminals of DDCCs, (iii) high-input impedance good for cascadability, (iv) no need to change the filter topology, (v) no need to component-matching conditions, (vi) low active and passive sensitivity performances, and (vii) simpler configuration due to the use of plus-type DDCCs only. HSPICE and MATLAB simulations results are provided to demonstrate the theoretical analysis.

Hua-Pin Chen

High-Input Impedance Voltage-Mode Multifunction Filter with Four Grounded Components and Only Two Plus-Type DDCCs

The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866&#x2009;MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite <svg style="vertical-align:-3.22281pt;width:18.1625px;" id="M2" height="11.0375" version="1.1" viewBox="0 0 18.1625 11.0375" width="18.1625"  xmlns="http://www.w3.org/2000/svg">
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		<g transform="translate(72,-63.17)">
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			</text>

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</svg> effect has been considered to improve the nanometric design,  achieving simultaneous impedance and minimum <svg style="vertical-align:-3.13504pt;width:29.25px;" id="M4" height="14.2375" version="1.1" viewBox="0 0 29.25 14.2375" width="29.25"  xmlns="http://www.w3.org/2000/svg">
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			</text>

		</g>
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</svg> noise matching at a very low power drain of 850&#x2009;<svg style="vertical-align:-2.29482pt;width:24.4px;" id="M5" height="13.325" version="1.1" viewBox="0 0 24.4 13.325" width="24.4"  xmlns="http://www.w3.org/2000/svg">
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</svg> from a 0.7&#x2009;V supply voltage. The LNA was fabricated using the IBM 130&#x2009;nm CMOS process  delivering a forward power gain (<svg style="vertical-align:-3.13504pt;width:21.85px;" id="M6" height="14.475" version="1.1" viewBox="0 0 21.85 14.475" width="21.85"  xmlns="http://www.w3.org/2000/svg">
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</svg> @866&#x2009;MHz) of  <svg style="vertical-align:-0.17555pt;width:69.300003px;" id="M11" height="11.1" version="1.1" viewBox="0 0 69.300003 11.1" width="69.300003"  xmlns="http://www.w3.org/2000/svg">
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			</text>

		</g>
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</svg>, and an input power reflection (<svg style="vertical-align:-3.13504pt;width:21.85px;" id="M12" height="14.475" version="1.1" viewBox="0 0 21.85 14.475" width="21.85"  xmlns="http://www.w3.org/2000/svg">
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			</text>

		</g>
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</svg>. It had a minimum pass-band <svg style="vertical-align:-0.0pt;width:25.35px;" id="M14" height="10.325" version="1.1" viewBox="0 0 25.35 10.325" width="25.35"  xmlns="http://www.w3.org/2000/svg">
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		</g>
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</svg> of around 2.2&#x2009;dB and a third-order input referred intercept point (IIP3) of <svg style="vertical-align:-0.17555pt;width:93.175003px;" id="M15" height="11.1" version="1.1" viewBox="0 0 93.175003 11.1" width="93.175003"  xmlns="http://www.w3.org/2000/svg">
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			</text>

		</g>
	</g>
</svg>.

Jie Li

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One configuration for realizing voltage-mode multifunction filters and another
configuration for realizing current-mode multifunction filters each using two current-feedback amplifiers (CFAs) are presented. The proposed voltage-mode circuit exhibits simultaneously lowpass, bandpass, and highpass filters. The proposed
current-mode circuit also exhibits simultaneously lowpass, bandpass, and highpass filters. The proposed circuits offer the following features: no requirements for component matching conditions, low active and passive sensitivities, employing only
grounded capacitors, and the ability to obtain multi-function filters from the same circuit configuration.

Jiun Wei Horng

Pei-Young Chou

Jian-Yu Wu

Voltage/Current-Mode Multifunction Filters Using Current-Feedback Amplifiers and Grounded Capacitors

About this journal

<p><em>Active and Passive Electronic Components </em>provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.</p>


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<p><em>Active and Passive Electronic Components </em>maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.</p>


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title

Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

Active and Passive Electronic Components