This paper introduces a new voltage-mode second-order sinusoidal generator circuit with four active elements and six passive elements, including grounded capacitors. The frequency and condition of oscillation can be independently controlled. The effect of active element&#x2019;s nonidealities and parasitic effects is also studied; the proposed topology is good in absorbing several parasitic elements involved with the active elements. The circuit is advantageous for generating high frequency signals which is demonstrated for 25&#x2009;MHz outputs. Several circuit extensions are also given which makes the new proposal useful for real circuit adoption. The proposed theory is validated through simulation results.

Sudhanshu Maheshwari

Voltage-Mode Four-Phase Sinusoidal Generator and Its Useful Extensions

Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) are well suited for circuit applications that require moderate device performance and low-temperature CMOS-compatible processing below 250&#xb0;C. Basic logic gate circuits fabricated using ambipolar nc-Si TFTs alone are presented and shown to operate with correct outputs at frequencies of up to 100&#x2009;kHz. Ring oscillators consisting of nc-Si TFT-based inverters are also shown to operate at above 20&#x2009;kHz with a supply voltage of 5&#x2009;V, corresponding to a propagation delay of &#x3c;10&#x2009;<i>&#x3bc;</i>s/stage. These are the fastest circuits formed out of nanocrystalline silicon TFTs to date. The effect of bias stress degradation of TFTs on oscillation frequency is also explored, and relatively stable operation is shown with supply voltages &#x3e;5&#x2009;V for several hours.

Anand Subramaniam

Kurtis D. Cantley

Eric M. Vogel

Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs

Noise performance of different structures of <svg     style="vertical-align:-3.3907pt;width:91.324997px;" id="M2" height="15.65" version="1.1" viewBox="0 0 91.324997 15.65" width="91.324997"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><use xlink:href="#x53"/></g><g transform="matrix(.017,-0,0,-.017,8.018,11.362)"><use xlink:href="#x69"/></g>

			<g transform="matrix(.017,-0,0,-.017,17.3,11.362)"><use xlink:href="#x223C"/></g>

			<g transform="matrix(.017,-0,0,-.017,32,11.362)"><use xlink:href="#x53"/></g><g transform="matrix(.017,-0,0,-.017,39.955,11.362)"><use xlink:href="#x69"/></g>

			<g transform="matrix(.012,-0,0,-.012,44.512,15.45)"><use xlink:href="#x31"/></g><g transform="matrix(.012,-0,0,-.012,50.224,15.45)"><use xlink:href="#x2212"/></g><g transform="matrix(.012,-0,0,-.012,57.208,15.45)"><use xlink:href="#x1D465"/></g>

			<g transform="matrix(.017,-0,0,-.017,64.475,11.362)"><use xlink:href="#x47"/></g><g transform="matrix(.017,-0,0,-.017,76.765,11.362)"><use xlink:href="#x65"/></g>

			<g transform="matrix(.012,-0,0,-.012,83.988,15.45)"><use xlink:href="#x1D465"/></g>

		
	
</svg>
 anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions <svg     style="vertical-align:-0.1638pt;width:49.237499px;" id="M3" height="11.125" version="1.1" viewBox="0 0 49.237499 11.125" width="49.237499"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,10.862)"><use xlink:href="#x1D465"/></g><g transform="matrix(.017,-0,0,-.017,14.273,10.862)"><path id="x3D" d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" /></g><g transform="matrix(.017,-0,0,-.017,28.977,10.862)"><path id="x30" d="M241 635q53 0 94 -28.5t63.5 -76t33.5 -102.5t11 -116q0 -58 -11 -112.5t-34 -103.5t-63.5 -78.5t-94.5 -29.5t-95 28t-64.5 75t-34.5 102.5t-11 118.5q0 58 11.5 112.5t34.5 103t64.5 78t95.5 29.5zM238 602q-32 0 -55.5 -25t-35.5 -68t-17.5 -91t-5.5 -105&#xA;q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" /></g><g transform="matrix(.017,-0,0,-.017,37.137,10.862)"><path id="x2E" d="M113 -12q-24 0 -39.5 16t-15.5 42q0 24 16 40.5t40 16.5t40 -16.5t16 -40.5q0 -26 -16 -42t-41 -16z" /></g><g transform="matrix(.017,-0,0,-.017,41.012,10.862)"><use xlink:href="#x31"/></g>

		
	
</svg> and <svg     style="vertical-align:-0.1638pt;width:49.237499px;" id="M4" height="11.125" version="1.1" viewBox="0 0 49.237499 11.125" width="49.237499"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,10.862)"><use xlink:href="#x1D465"/></g><g transform="matrix(.017,-0,0,-.017,14.273,10.862)"><use xlink:href="#x3D"/></g><g transform="matrix(.017,-0,0,-.017,28.977,10.862)"><use xlink:href="#x30"/></g><g transform="matrix(.017,-0,0,-.017,37.137,10.862)"><use xlink:href="#x2E"/></g><g transform="matrix(.017,-0,0,-.017,41.012,10.862)"><path id="x33" d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5&#xA;q0 45 -26.5 69.5t-68.5 24.5q-67 0 -120 -79l-20 20l43 63q51 56 127 56h1q66 0 107 -37t41 -95q0 -42 -31 -71q-22 -23 -68 -54z" /></g>

		
	
</svg> of Ge and corresponding four types of device structure are considered for the simulation. The results show that the <svg     style="vertical-align:-3.3907pt;width:117.9625px;" id="M5" height="15.65" version="1.1" viewBox="0 0 117.9625 15.65" width="117.9625"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path id="x1D45B" d="M495 86q-46 -47 -87 -72.5t-63 -25.5q-43 0 -16 107l49 210q7 34 8 50.5t-3 21t-13 4.5q-35 0 -109.5 -72.5t-115.5 -140.5q-21 -75 -38 -159q-50 -10 -76 -21l-6 8l84 340q8 35 -4 35q-17 0 -67 -46l-15 26q44 44 85.5 70.5t64.5 26.5q35 0 10 -103l-24 -98h2&#xA;q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" /></g><g transform="matrix(.017,-0,0,-.017,12.37,11.362)"><use xlink:href="#x2212"/></g>

			<g transform="matrix(.017,-0,0,-.017,26.125,11.362)"><use xlink:href="#x53"/></g><g transform="matrix(.017,-0,0,-.017,34.097,11.362)"><use xlink:href="#x69"/></g>

			<g transform="matrix(.012,-0,0,-.012,38.637,15.45)"><use xlink:href="#x30"/></g><g transform="matrix(.012,-0,0,-.012,44.349,15.45)"><use xlink:href="#x2E"/></g><g transform="matrix(.012,-0,0,-.012,47.062,15.45)"><path id="x37" d="M447 623l8 -12l-283 -613l-74 -10l-7 11q174 283 297 551h-216q-48 0 -62.5 -12t-33.5 -63h-29q10 60 18 148h382z" /></g>

			<g transform="matrix(.017,-0,0,-.017,53.4,11.362)"><use xlink:href="#x47"/></g><g transform="matrix(.017,-0,0,-.017,65.673,11.362)"><use xlink:href="#x65"/></g>

			<g transform="matrix(.012,-0,0,-.012,72.912,15.45)"><use xlink:href="#x30"/></g><g transform="matrix(.012,-0,0,-.012,78.624,15.45)"><use xlink:href="#x2E"/></g><g transform="matrix(.012,-0,0,-.012,81.337,15.45)"><use xlink:href="#x33"/></g>

			<g transform="matrix(.017,-0,0,-.017,92.4,11.362)"><use xlink:href="#x223C"/></g><g transform="matrix(.017,-0,0,-.017,107.087,11.362)"><path id="x1D443" d="M619 482q0 -69 -40.5 -119t-96 -72.5t-118.5 -26.5h-44l-70 20l-31 -151q-14 -67 0.5 -83t89.5 -22l-5 -28h-287l8 28q65 7 81.5 22t29.5 83l79 398q12 56 0.5 70.5t-78.5 20.5l7 28h255q108 0 164 -43t56 -125zM524 478q0 141 -146 141q-25 0 -47 -8q-16 -6 -20.5 -13.5&#xA;t-10.5 -39.5l-43 -241q37 -13 83 -13q67 0 125.5 45t58.5 129z" /></g>

		
	
</svg>-Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density (<svg     style="vertical-align:-0.1638pt;width:81.362503px;" id="M6" height="16.112499" version="1.1" viewBox="0 0 81.362503 16.112499" width="81.362503"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,15.85)"><use xlink:href="#x30"/></g><g transform="matrix(.017,-0,0,-.017,8.222,15.85)"><use xlink:href="#x2E"/></g><g transform="matrix(.017,-0,0,-.017,12.098,15.85)"><path id="x38" d="M249 635q70 0 116 -43t46 -105q0 -46 -28 -80q-22 -25 -80 -64q62 -35 97 -75t35 -99q0 -81 -63 -131t-135 -50q-83 0 -137.5 45.5t-54.5 123.5q0 52 45 95q29 28 89 64q-109 62 -109 155q0 66 50.5 115t128.5 49zM238 603q-42 0 -67.5 -31t-25.5 -72q0 -50 32.5 -79.5&#xA;t98.5 -62.5q61 48 61 124q0 59 -29.5 90t-69.5 31zM248 20q46 0 76.5 33.5t30.5 89.5q0 50 -39 85.5t-110 71.5q-81 -54 -81 -137q0 -67 35.5 -105t87.5 -38z" /></g><g transform="matrix(.017,-0,0,-.017,20.257,15.85)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g><g transform="matrix(.017,-0,0,-.017,32.19,15.85)"><path id="xD7" d="M528 54l-36 -38l-198 201l-198 -201l-36 38l197 200l-197 201l36 38l198 -202l198 202l36 -38l-197 -201z" /></g><g transform="matrix(.017,-0,0,-.017,45.942,15.85)"><use xlink:href="#x31"/></g><g transform="matrix(.017,-0,0,-.017,54.102,15.85)"><use xlink:href="#x30"/></g>

			<g transform="matrix(.012,-0,0,-.012,62.262,7.688)"><use xlink:href="#x2212"/></g><g transform="matrix(.012,-0,0,-.012,69.247,7.688)"><use xlink:href="#x31"/></g><g transform="matrix(.012,-0,0,-.012,74.958,7.688)"><path id="x36" d="M137 343l67 33q37 17 63 17q79 0 129.5 -53t50.5 -131q0 -92 -58 -156.5t-147 -64.5t-147 68t-58 182q0 63 17 119t43 95.5t61.5 72t69 52t67.5 31.5q62 22 128 33l6 -32q-56 -11 -108 -35q-149 -71 -184 -231zM227 337q-47 0 -95 -27q-6 -23 -6 -70q0 -93 36 -155.5&#xA;t96 -62.5q53 0 78 45.5t25 105.5q0 68 -35 116t-99 48z" /></g>

		
	
</svg> <svg     style="vertical-align:-0.15013pt;width:21.237499px;" id="M7" height="16.025" version="1.1" viewBox="0 0 21.237499 16.025" width="21.237499"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,2.9,15.775)"><path id="x56" d="M687 650v-28q-52 -6 -71.5 -23t-47.5 -83q-142 -346 -208 -527h-31q-119 325 -207 545q-21 54 -39.5 68.5t-65.5 19.5v28h245v-28q-52 -5 -61.5 -15.5t3.5 -43.5q55 -157 166 -437h2q120 303 158 421q14 43 3.5 55.5t-71.5 19.5v28h225z" /></g>

			<g transform="matrix(.012,-0,0,-.012,14.85,7.613)"><use xlink:href="#x32"/></g>

		
	
</svg>&#x2009;sec) and noise measure (33.09&#x2009;dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15&#x25;) and CW power output (773.29&#x2009;mW).

Suranjana Banerjee

Aritra Acharyya

J. P. Banerjee

Noise Performance of Heterojunction DDR MITATT Devices Based on <svg style="vertical-align:-3.3907pt" height="15.65" version="1.1" viewBox="0 0 81.887497 15.65" width="81.887497" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52&#xA;t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g><g transform="matrix(.017,-0,0,-.017,8.018,11.362)"><path id="x69" d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" /></g><g transform="matrix(.017,-0,0,-.017,12.574,11.362)"><path id="x223C" d="M548 311q-21 -57 -59 -94t-89 -37q-53 0 -128 52q-55 38 -84 38q-39 0 -70.5 -23t-45.5 -60l-32 12q21 57 59 94t89 37q53 0 128 -52q55 -38 84 -38q39 0 70.5 23t45.5 60z" /></g><g transform="matrix(.017,-0,0,-.017,22.552,11.362)"><use xlink:href="#x53"/></g><g transform="matrix(.017,-0,0,-.017,30.507,11.362)"><use xlink:href="#x69"/></g><g transform="matrix(.012,-0,0,-.012,35.062,15.45)"><path id="x31" d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" /></g><g transform="matrix(.012,-0,0,-.012,40.774,15.45)"><path id="x2212" d="M535 230h-483v50h483v-50z" /></g><g transform="matrix(.012,-0,0,-.012,47.758,15.45)"><path id="x1D465" d="M536 404q0 -17 -13.5 -31.5t-26.5 -14.5q-8 0 -15 10q-11 14 -25 14q-22 0 -67 -50q-47 -52 -68 -82l37 -102q31 -88 55 -88t78 59l16 -23q-32 -48 -68.5 -78t-65.5 -30q-19 0 -37.5 20t-29.5 53l-41 116q-72 -106 -114.5 -147.5t-79.5 -41.5q-21 0 -34.5 14t-13.5 37&#xA;q0 16 13.5 31.5t28.5 15.5q12 0 17 -11q5 -10 25 -10q22 0 57.5 36t89.5 111l-40 108q-22 58 -36 58q-21 0 -67 -57l-19 20q81 107 125 107q17 0 30 -22t39 -88l22 -55q68 92 108.5 128.5t74.5 36.5q20 0 32.5 -14t12.5 -30z" /></g><g transform="matrix(.017,-0,0,-.017,55.038,11.362)"><path id="x47" d="M692 302v-28q-45 -6 -54.5 -17t-9.5 -55v-86q0 -62 7 -95q-7 -2 -32 -7.5l-37 -8l-35.5 -7.5t-40.5 -7t-38.5 -4t-40.5 -2q-165 0 -266 93t-101 243q0 84 32 151t86 108t121.5 63t142.5 22q29 0 62.5 -4t52 -7.5t47.5 -10.5t31 -7l15 -156l-28 -6q-17 87 -66.5 121.5&#xA;t-128.5 34.5q-117 0 -191 -80.5t-74 -216.5q0 -56 17 -110t49.5 -100.5t87.5 -74.5t124 -28q53 0 87 17q17 9 24.5 23t7.5 43v85q0 54 -15.5 67.5t-89.5 18.5v28h254z" /></g><g transform="matrix(.017,-0,0,-.017,67.311,11.362)"><path id="x65" d="M380 106l15 -22q-42 -52 -87 -74t-76 -22q-89 0 -142 62t-53 151q0 103 66 175q67 73 146 73h1q61 0 105.5 -46.5t44.5 -105.5q0 -16 -4.5 -22.5t-18.5 -9.5q-54 -10 -262 -17q1 -95 46 -143.5t104 -48.5q61 0 115 50zM225 412q-35 0 -64.5 -32.5t-40.5 -90.5q83 0 170 3&#xA;q14 0 19 4.5t5 15.5q1 41 -23.5 70.5t-65.5 29.5z" /></g><g transform="matrix(.012,-0,0,-.012,74.55,15.45)"><use xlink:href="#x1D465"/></g></svg> at W-Band

This paper presents a new single-resistance-controlled sinusoidal oscillator (SRCO).  The proposed oscillator employs only one voltage differencing differential input buffered amplifier (VD-DIBA), two resistors, and two grounded capacitors. The proposed configuration offers the following advantageous features: (i) independent control of condition of oscillation and frequency of oscillation, (ii) low active and passive sensitivities, and (iii)  a very good frequency stability. The validity of the proposed SRCO has been established by SPICE simulations using 0.35&#x2009;<i>&#x3bc;</i>m MIETEC technology.

K. L. Pushkar

D. R. Bhaskar

Dinesh Prasad

Single-Resistance-Controlled Sinusoidal Oscillator Using Single VD-DIBA

A power efficient circuit topology is proposed to implement a low-voltage CMOS 2-input pass-transistor XOR gate. This design aims to minimize  power dissipation and reduce transistor count while at the same time reducing the propagation delay. The XOR gate utilizes six transistors to achieve a compact circuit design and was fabricated using the 130&#x2009;nm IBM CMOS process. The performance of the XOR circuit was validated against other XOR gate designs through simulations using the same 130&#x2009;nm CMOS process. The area of the core circuit is only about 56&#x2009;sq&#x2009;&#x000B7;&#x2009;&#xb5;m with 1.5659&#x2009;ns propagation delay and  0.2312&#x2009;nW power dissipation at 0.8&#x2009;V supply voltage. The proposed six-transistor implementation thus compares favorably  with other existing XOR gate designs.

Nabihah Ahmad

Rezaul Hasan

A 0.8<i>&#x2009;</i>V  0.23<i>&#x2009;</i>nW 1.5<i>&#x2009;</i>ns Full-Swing Pass-Transistor XOR Gate in 130<i>&#x2009;</i>nm CMOS

Kuan-Wei Lee

Edward Yi Chang

Yeong-Her Wang

Pei-Wen Li

Yasuyuki Miyamoto

Metal-Insulator-Semiconductor Field-Effect Transistors

This paper presents a millimeter-wave, 60&#x2009;GHz frequency band planar diplexer based on substrate integrated waveguide (SIW) technology. Diplexer consists of a pair of 5th-order SIW bandpass channel filters with center frequencies at 59.8&#x2009;GHz and 62.2&#x2009;GHz providing 1.67&#x25; and 1.6&#x25; relative bandwidths, respectively. SIW-to-microstrip transitions at diplexer ports enable integration in a millimeter-wave transceiver front end. Measurements are in good agreement with electromagnetic simulation, reporting very good channel isolation, small return losses, and moderate insertion losses in the passbands. The proposed SIW planar diplexer is integrated into a millimeter-wave transceiver front end for 60&#x2009;GHz point-to-point multigigabit wireless backhaul applications, providing high isolation between transmit and receive channels.

Nikolaos Athanasopoulos

Dimitrios Makris

Konstantinos Voudouris

A 60 GHz Planar Diplexer Based on Substrate Integrated Waveguide Technology

We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to create a fully depleted silicon-on-insulator (FDSOI) nMOSFET, which overcomes the need for a uniform ultrathin silicon film. The presence of block-oxide along the sidewalls of the Si body significantly reduces the influence of drain bias over the channel. The proposed FDSOI structure therefore outperforms conventional FDSOI with regard to its drain-induced barrier lowering (DIBL), on/off current ratio, subthreshold swing, and threshold voltage rolloff. The new FDSOI structure is in fact shown to behave similarly to an ultrathin body (UTB) SOI but without the associated disadvantages and technological challenges of the ultrathin film, because a thick Si body allows for reduced sensitivity to self-heating, thereby improving thermal stability.

Jyi-Tsong Lin

Yi-Chuen Eng

Po-Hsieh Lin

A Novel Nanoscale FDSOI MOSFET with Block-Oxide

About this journal

<p><em>Active and Passive Electronic Components </em>provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.</p>


Journal profile

Meet the editorial board

<p><em>Active and Passive Electronic Components </em>maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.</p>


Editor spotlight

Submit your proposal

Do you think there is an emerging area of research that really needs to be highlighted? Or an existing research area that has been overlooked or would benefit from deeper investigation? Raise the profile of a research area by leading a Special Issue.

Special Issues

Author guidelines

Editorial board

Databases and indexing

Active and Passive Electronic Components - Table of contents 2013

Active and Passive Electronic Components | Hindawi

title

Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

description

https://images.hindawi.com/journals/apec/apec.banner.jpg

Active and Passive Electronic Components