Analysis of Leakage Reduction Techniques in Independent-Gate DG FinFET SRAM Cell
Figure 10
Graphical representation of various parameters such as leakage current, leakage power, and power consumption using independent-gate FinFET, IG FinFET with NMOS MVT, IG FinFET with PMOS MVT, and IG FinFET with gated- techniques in 6T SRAM cell.
