Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 8

Based on the data of Figure 6(b), the power needed to promote continuous resistive switching of that MIM structure is reduced, while the memory window ( ratios) increases. Even though these are desirable characteristics for a ReRAM device, this behavior is a consequence of the progressive reduction in the parameter which, in turn, will compromise endurance and the general reliability of these memory devices.