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Volume 2018, Article ID 2806976, 10 pages
Research Article

Fractional-Order Memristor Emulator Circuits

1UATx, Mexico
2ITESM, Mexico

Correspondence should be addressed to C. Sánchez-López; xm.moc.oohay@xmnaslrac

Received 16 March 2018; Revised 24 April 2018; Accepted 24 April 2018; Published 28 May 2018

Academic Editor: Viet-Thanh Pham

Copyright © 2018 C. Sánchez-López et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This brief leads the synthesis of fractional-order memristor (FOM) emulator circuits. To do so, a novel fractional-order integrator (FOI) topology based on current-feedback operational amplifier and integer-order capacitors is proposed. Then, the FOI is substituting the integer-order integrator inside flux- or charge-controlled memristor emulator circuits previously reported in the literature and in both versions: floating and grounded. This demonstrates that FOM emulator circuits can also be configured at incremental or decremental mode and the main fingerprints of an integer-order memristor are also holding up for FOMs. Theoretical results are validated through HSPICE simulations and the synthesized FOM emulator circuits can easily be reproducible. Moreover, the FOM emulator circuits can be used for improving future applications such as cellular neural networks, modulators, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices, and programmable analog circuits.