Table of Contents
Conference Papers in Energy
Volume 2013 (2013), Article ID 782891, 4 pages
Conference Paper

Effect of ZnO:Al Thickness on the Open Circuit Voltage of Organic/a-Si:H Based Hybrid Solar Cells

1SSN Research Centre, SSN Nagar, Kalavakkam 603110, India
2Samtel Centre for Display Technology, IIT Kanpur, Kanpur 208016, India

Received 4 January 2013; Accepted 30 April 2013

Academic Editors: B. Bhattacharya and U. P. Singh

This Conference Paper is based on a presentation given by S. Bhattacharya at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 Chandra Bhal Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Hybrid solar cells are based on the concept of using both organic and inorganic materials for fabrication of devices. Hybrid solar cells, based on a heterojunction between inorganic electron acceptor layer and organic donor layer, has been fabricated. Effect of electron transport layer on open circuit voltage ( ) of hybrid solar cells was investigated. Hybrid solar cells were fabricated using amorphous silicon as main absorbing layer and as electron acceptor layer while using copper phthalocyanine (CuPc) as the donor materials. Al doped ZnO layer was used as buffer layer between ITO and a-Si:H to prevent ITO from reacting with silane gas during plasma enhanced chemical deposition (PECVD) process. ZnO:Al thin film also acts as electron transport layer. The open circuit voltage of hybrid solar cells studied with varying the thickness of ZnO:Al layer. was increased from 0.30 volt to 0.52 volt with increasing the thickness of ZnO:Al layer from 15 nm to 45 nm. The poor interface between inorganic (a-Si:H) and organic layers may be a possible reason for low fill factor and low photocurrent in hybrid solar cells.