Table of Contents
Conference Papers in Science
Volume 2014, Article ID 656120, 4 pages
Conference Paper

Dielectric Properties of SnO2 Thin Film Using SPR Technique for Gas Sensing Applications

1Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
2Department of Physics, Miranda House, University of Delhi, Delhi 110007, India

Received 8 February 2014; Accepted 11 March 2014; Published 6 May 2014

Academic Editors: P. Mandal, R. K. Shivpuri, and G. N. Tiwari

This Conference Paper is based on a presentation given by Ayushi Paliwal at “National Conference on Advances in Materials Science for Energy Applications” held from 9 January 2014 to 10 January 2014 in Dehradun, India.

Copyright © 2014 Ayushi Paliwal et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Focus has been made on the determination of dielectric constant of thin dielectric layer (SnO2 thin film) using surface plasmon resonance (SPR) technique and exploiting it for the detection of NH3 gas. SnO2 thin film has been deposited by rf-sputtering technique on gold coated glass prism (BK-7) and its SPR response was measured in the Kretschmann configuration of attenuated total reflection using a p-polarised light beam at 633 nm wavelength. The SPR response of bilayer film was fitted with Fresnel’s equations in order to calculate the dielectric constant of SnO2 thin film. The air/SnO2/Au/prim system has been utilized for detecting varying concentration (500 ppm to 2000 ppm) of NH3 gas at room temperature using SPR technique. SPR curve shows significant shift in resonance angle from 44.8° to 56.7° on exposure of fixed concentration of NH3 gas (500 ppm to 2000 ppm) with very fast response and recovery speeds.