NO<sub>2</sub> Sensing Properties of WO<sub>3</sub> Thin Films Deposited by Rf-Magnetron Sputtering

<table>Variation of sensor resistance in the presence of 5 ppm NO<sub>2</sub> gas with temperature for sensor structures: WO<sub>3</sub>/Sn, WO<sub>3</sub>/Zn, and WO<sub>3</sub>/Pt.</table>

Conference Papers in Science

fig5

Figure 5

Figure 5: NO<sub>2</sub> Sensing Properties of WO<sub>3</sub> Thin Films Deposited by Rf-Magnetron Sputtering 

Conference Papers in Science

NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

Figure 5

NO₂ Sensing Properties of WO₃ Thin Films Deposited by Rf-Magnetron Sputtering