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International Journal of Antennas and Propagation
Volume 2013 (2013), Article ID 738659, 3 pages
Research Article

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

1Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received 17 March 2013; Accepted 25 April 2013

Academic Editor: Haiwen Liu

Copyright © 2013 Liwei Jin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.