Analysis of Nanodipoles in Optical Nanocircuits Fed by Gaussian Beam

Figure 4

(a) Geometry and discretization of nanocircuit with 𝐻₁=386 nm, 𝐻₂=488 nm, 𝐿=1200 nm, 𝑎_ℎ1=10 nm, 𝑎_𝐿=𝑎_ℎ2=15 nm, 𝐷=10 nm, 𝑁_ℎ1=8, 𝑁_ℎ2=7, 𝑁_𝐿=40, Δ𝐿_𝐿=30 nm, Δℎ₁=21.6 nm, Δℎ₂=32 nm, and 𝑁=108. (b) Amplitude of linear current distribution along nanocircuit. The voltage reflection coefficient of this circuit is |Γ_𝑉|=0.4.

(a)

(b)