Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

Table 1

Rotman Lens Design Specifications.

Parameter	Value
Gold conductor thickness (𝜇m)	1.5
Silicon substrate thickness (𝜇m)	200
Silicon permittivity	11.8
Silicon loss tangent	0.0005
Length (mm) × width (mm)	19.7×15.6
Center frequency	77 GHz
Bandwidth	8 GHz
Beamwidth	20°
Focal angle	10°
Scan angle	10°
Beam ports	3
Array ports	5
Dummy ports	16
Element spacing	2.6 mm
Z system	50 ohms
Port width	0.16 mm