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International Journal of Antennas and Propagation
Volume 2015, Article ID 470952, 14 pages
Research Article

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

School of Electronic and Information Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, China

Received 24 July 2015; Revised 3 November 2015; Accepted 4 November 2015

Academic Editor: Felipe Cátedra

Copyright © 2015 Zhaowen Yan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Convergence of multiple functions in a single device is the main thought behind the development of the current electronic trends. So, the requirement for higher integration in electronic devices has become more important in present days than in the past. Through silicon via (TSV) is the latest interconnect technology proposed mainly for higher integration and higher frequency. Therefore, cross talk will be an essential issue that needs to be taken into consideration. In this paper, we study the electrical property of a GSSG (S-Signal, G-Ground) TSV structure and propose the accurate lumped model which can be used to predict the TSV performance. Since more dies are used within one chip, the single layer TSV cannot satisfy the requirement. Hence, we propose the multilayer TSV structure and study how the bump radius, bump height, and underfill material affect the TSV transmission performance and coupling issue, so that we can conduct a good TSV design. Furthermore, three multilayer 4 × 4 TSV array models are proposed with different GS distribution to analyze the detailed coupling results.