Research Article
Effect of C/Si Ratio on the Electrochemical Behavior of a-SiCx:H Coatings on SS301 Substrate Deposited by PECVD
Table 1
The deposition conditions of a-SiC
x:H coatings and the corresponding elemental composition, rms roughness, and
ratios.
| | Coating |
Gas flow (sccm) |
Elemental composition (at.%) | C/Si ratio () | rms roughness (0.3 nm) | | | CH4 | SiH4 | C | Si |
| | a-:H | 30 | 5 | 37.2 | 62.8 | 0.59 | 4.3 | 0.130 | | a-:H | 50 | 5 | 42.8 | 57.2 | 0.75 | 3.9 | 0.135 | | a-:H | 70 | 5 | 47.2 | 52.8 | 0.89 | 4.0 | 0.142 | | a-:H | 90 | 5 | 50.5 | 49.5 | 1.02 | 6.1 | 0.150 |
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