Table of Contents
Indian Journal of Materials Science
Volume 2014, Article ID 715356, 5 pages
Research Article

Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals

Materials Group, Bhabha Atomic Research Centre, Mumbai 400085, India

Received 18 September 2013; Accepted 10 December 2013; Published 9 January 2014

Academic Editors: D. Gomez-Garcia and A. Le Donne

Copyright © 2014 Naisheel Verdhan and Rajeev Kapoor. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Discrete dislocation dynamics were used to determine the relative strengths of binary dislocation junctions in fcc crystals. Equilibrium junctions of different types Lomer, glissile, coplanar, and collinear were formed by allowing parallel dislocations of unequal length to react. The strengths were determined from the computed minimum strain rate versus the applied shear stress plots. The collinear configuration was found to be the strongest and coplanar the weakest. It was seen that the glissile junction could exist as two variants depending on which parent slip system the shear stress is applied. One variant of the glissile junction was found to be as strong as the collinear configuration.