Table of Contents
International Journal of Microwave Science and Technology
Volume 2011, Article ID 452348, 16 pages
http://dx.doi.org/10.1155/2011/452348
Research Article

Scalable RFCMOS Model for 90 nm Technology

1School of EEE, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
2Cascade Microtech Inc., Singapore Science Park II, Singapore 117586
3Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China

Received 30 May 2011; Revised 8 September 2011; Accepted 12 September 2011

Academic Editor: Mattia Borgarino

Copyright © 2011 Ah Fatt Tong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ah Fatt Tong, Wei Meng Lim, Choon Beng Sia, Xiaopeng Yu, Wanlan Yang, and Kiat Seng Yeo, “Scalable RFCMOS Model for 90 nm Technology,” International Journal of Microwave Science and Technology, vol. 2011, Article ID 452348, 16 pages, 2011. https://doi.org/10.1155/2011/452348.