Research Article
Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency
Table 3
Noise behaviours of GaN DDR, GaN SDR, Si DDR, and SiC DDR diodes at sub-mm wave frequency band.
| | Material & structure | (THz) | (V2s) | (THz) | NM at (dB) | at (V2s) | NM at (dB) |
| | GaN DDR | 0.11 | 7.00 × 10−13 | 0.35 | 33.50 | 3.97 × 10−16 | 34.40 | | GaN SDR | 0.11 | 3.73 × 10−12 | 0.67 | 31.59 | 4.38 × 10−16 | 34.23 | | Si DDR | 0.18 | 2.86 × 10−14 | 0.62 | 20.68 | 2.45 × 10−17 | 24.59 | | SiC DDR | 0.14 | 4.86 × 10−14 | 0.57 | 25.20 | 1.54 × 10−16 | 29.70 |
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