Photophysical properties of self-aggregated porphyrin: semiconductor nanoassemblies

Zenkevich, E.; Blaudeck, T.; Abdel-Mottaleb, M.; Cichos, F.; Shulga, A.; von Borczyskowski, C.

doi:https://doi.org/10.1155/IJP/2006/90242

International Journal of Photoenergy

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Volume 2006 | Article ID 090242 | https://doi.org/10.1155/IJP/2006/90242

Photophysical properties of self-aggregated porphyrin: semiconductor nanoassemblies

E. Zenkevich,¹T. Blaudeck,²M. Abdel-Mottaleb,³F. Cichos,²A. Shulga,¹and C. von Borczyskowski³

Received04 Jul 2005

Accepted05 Jan 2006

Published09 May 2006

Abstract

Colloidal semiconductor nanocrystals from CdSe show photoluminescence quenching via titration with porphyrin derivatives. This quenching is an indication of the formation of nanoassemblies via surface attachment of pyridyl linker groups. As a consequence of the complex formation, dynamic and/or static interactions between QD and porphyrins are induced. Quenching efficiencies depend critically on sample stability, temperature, solvent, and electronic properties of the porphyrins. In order to optimize photoinduced dynamic processes these parameters have to be under control.

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Copyright

Copyright © 2006 E. Zenkevich et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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