International Journal of Photoenergy

International Journal of Photoenergy / 2007 / Article

Research Article | Open Access

Volume 2007 |Article ID 018298 | https://doi.org/10.1155/2007/18298

Mohamed Fathi, "Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers", International Journal of Photoenergy, vol. 2007, Article ID 018298, 4 pages, 2007. https://doi.org/10.1155/2007/18298

Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

Academic Editor: Nicolas Alonso-Vante
Received23 Mar 2006
Accepted15 Aug 2006
Published09 Nov 2006

Abstract

We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si) wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm). Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

References

  1. M. Karilahti, Defect and yield analysis of semiconductor components and integrated circuits, Ph.D. thesis, Helsinki University of Technology, Espoo, Finland, February 2003.
  2. D. H. Macdonald, Recombination and trapping in multicrystalline silicon solar cells, Ph.D. thesis, Department of Engineering, The Australian National University, Canberra, Australia, May 2001.
  3. M. Spiegel, Microwave induced remote hydrogen plasma (MIRHP) passivation of multicrystalline silicon solar cells, Ph.D. thesis, Konstanz University of Physics, Konstanz, Germany, October 1998.
  4. E. B. Yakimov, “Dislocation-point defect interaction effect on local electrical properties of semiconductors,” Journal de Physique III France, vol. 7, no. 12, pp. 2293–2307, 1997. View at: Publisher Site | Google Scholar
  5. M. S. Kulkarni, J. Libbert, S. Keltner, and L. Muléstagno, “A theoretical and experimental analysis of macrodecoration of defects in monocrystalline silicon,” Journal of the Electrochemical Society, vol. 149, no. 2, pp. G153–G165, 2002. View at: Publisher Site | Google Scholar
  6. G. E. McGuire, Ed., Semiconductor Materials and Process Technology Handbook, William Andrew/Noyes, Park Ridge, NJ, USA, 1988.
  7. W. C. Dash, “Copper precipitation on dislocations in silicon,” Journal of Applied Physics, vol. 27, no. 10, pp. 1193–1195, 1956. View at: Publisher Site | Google Scholar
  8. E. Sirtl and A. Z. Adler, “Chromic-hydrofluoric acid as a specific system for the development of Etch pits on silicon,” Zeitschrift für Metallkunde, vol. 52, no. 8, pp. 529–531, 1961. View at: Google Scholar
  9. F. Secco d'Aragona, “Dislocation Etch for (100) planes in silicon,” Journal of the Electrochemical Society, vol. 119, no. 7, pp. 948–951, 1972. View at: Google Scholar
  10. K. H. Yang, “An Etch for delineation of defects in silicon,” Journal of the Electrochemical Society, vol. 131, no. 5, pp. 1140–1145, 1984. View at: Publisher Site | Google Scholar
  11. K. H. Yang, “A preferential Etch for silicon crystals,” in Semiconductor Processing, ASTM STP 850, D. C. Gupta, Ed., American Society for Testing and Materials, Philadelphia, Pa, USA, 1984. View at: Google Scholar
  12. W. M. Jenkins, “A new preferential Etch for defects in silicon crystals,” Journal of the Electrochemical Society, vol. 124, no. 5, pp. 479–762, 1977. View at: Google Scholar
  13. V. G. Popov, “Semiconductor physics,” Quantum Electronics & Optoelectronics, vol. 3, no. 4, pp. 479–488, 2000. View at: Google Scholar
  14. S. Pizzini, “Chemistry and physics of segregation of impurities at extended defects in silicon,” Physica Status Solidi (a), vol. 171, no. 1, pp. 123–132, 1999. View at: Publisher Site | Google Scholar

Copyright © 2007 Mohamed Fathi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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