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International Journal of Photoenergy
Volume 2007, Article ID 18298, 4 pages
Research Article

Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

Silicon Technology Unit of Algiers (UDTS), 2 Boulevard Frantz Fanon, BP 399 Alger-Gare, Algiers, Algeria

Received 23 March 2006; Accepted 15 August 2006

Academic Editor: Nicolas Alonso-Vante

Copyright © 2007 Mohamed Fathi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si) wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm). Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.