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International Journal of Photoenergy
Volume 2007, Article ID 87467, 6 pages
http://dx.doi.org/10.1155/2007/87467
Research Article

Enhanced Photoelectrochemical Response of Zn-Dotted Hematite

1Department of Physics and Computer Science, Faculty of Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282005, India
2Department of Chemistry, Faculty of Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282005, India
3Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India

Received 8 September 2006; Revised 11 January 2007; Accepted 18 March 2007

Academic Editor: Ignazio Renato Bellobono

Copyright © 2007 Saroj Kumari et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Photoelectrochemical response of thin films of α-Fe2O3, Zn doped α-Fe2O3, and Zn dots deposited on doped α-Fe2O3 prepared by spray pyrolysis has been studied. Samples of Zn dots were prepared using thermal evaporation method by evaporating Zn through a mesh having pore diameter of 0.7 mm. The presence of Zn-dotted islands on doped α-Fe2O3 surface exhibited significantly large photocurrent density as compared to other samples. An optimum thickness of Zn dots 230 Å is found to give enhanced photoresponse. The observed results are analyzed with the help of estimated values of resistivity, band gap, flatband potential, and donor density.