Enhanced Photoelectrochemical Response of Zn-Dotted Hematite

Kumari, Saroj; Singh, Aadesh P.; Tripathi, Chanakya; Chauhan, Diwakar; Dass, Sahab; Shrivastav, Rohit; Gupta, Vinay; Sreenivas, K.; Satsangi, Vibha R.

doi:https://doi.org/10.1155/2007/87467

International Journal of Photoenergy

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Research Article | Open Access

Volume 2007 | Article ID 087467 | https://doi.org/10.1155/2007/87467

Enhanced Photoelectrochemical Response of Zn-Dotted Hematite

Saroj Kumari,¹Aadesh P. Singh,¹Chanakya Tripathi,²Diwakar Chauhan,²Sahab Dass,²Rohit Shrivastav,²Vinay Gupta,³K. Sreenivas,³and Vibha R. Satsangi¹

Academic Editor: Ignazio Renato Bellobono

Received08 Sept 2006

Revised11 Jan 2007

Accepted18 Mar 2007

Published21 May 2007

Abstract

Photoelectrochemical response of thin films of α-Fe2O3, Zn doped α-Fe2O3, and Zn dots deposited on doped α-Fe2O3 prepared by spray pyrolysis has been studied. Samples of Zn dots were prepared using thermal evaporation method by evaporating Zn through a mesh having pore diameter of 0.7 mm. The presence of Zn-dotted islands on doped α-Fe2O3 surface exhibited significantly large photocurrent density as compared to other samples. An optimum thickness of Zn dots ∼230 Å is found to give enhanced photoresponse. The observed results are analyzed with the help of estimated values of resistivity, band gap, flatband potential, and donor density.

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Copyright © 2007 Saroj Kumari et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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