Research Article
From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth
Table 2
Summary of results of cell design
| | Cell design | Approximate change in Efficiency at 10 suns | Resistive Power loss with respect to power generated at 10 suns |
| | Junction optimized, electroplated cell (case 4) | +2 −3% | 8.7% | | Electroplated cell (case 3) | −1% | 11.25% | | Junction optimized cell (case 2) | −5% | 16.49% | | Grid-optimized cell (case 1) | −10% | 20.15% | | Commercial 1 sun (experimental data) | −30% | Not available | | Unoptimized 1 sun (case 0) | −35% | 42.2% |
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