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International Journal of Photoenergy
Volume 2010 (2010), Article ID 793481, 4 pages
http://dx.doi.org/10.1155/2010/793481
Research Article

Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films

1State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, China
2Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China
3International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China

Received 18 November 2009; Revised 12 April 2010; Accepted 16 April 2010

Academic Editor: Mario Pagliaro

Copyright © 2010 Wenwei Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ−1 was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ−1 mm−1. This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection