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International Journal of Photoenergy
Volume 2011 (2011), Article ID 139374, 6 pages
Research Article

Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

1Advanced Technology and New Materials Research Institute, Mubarak City for Scientific Research and Technology Applications, New Borg El-Arab City, Alexandria 21934, Egypt
2Institute of Graduate Studies and Research, Alexandria University, 163 Horrya Avenue, P.O. Box 832, Shatby, Alexandria 21526, Egypt

Received 27 January 2011; Revised 28 February 2011; Accepted 31 March 2011

Academic Editor: Mohamed Sabry Abdel-Mottaleb

Copyright © 2011 Abd El-Hady B. Kashyout et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about  Ω·cm.