Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts
Figure 3
Thickness variation of ribbon-type Si wafers depending on the time interval at the range of 0.5–2.5 sec at the constant substrate temperature of 1000°C, moving velocity of substrates of 485 cm/min, and blowing rate of Ar gas of 0.8 Nm3/h.
