International Journal of Photoenergy / 2012 / Article / Tab 1

Research Article

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Table 1

Chemical compositions (measured by XRF) of the precursor films and subsequent selenized films at 550°C for 30 min.

SampleCu (at%)In (at%)Ga (at%)Se (at%)[Cu]/[In + Ga][Ga]/[In + Ga]2 [Se]/([Cu] + 3 [In + Ga])

Cu-rich precursor film39.8021.879.2929.051.2770.2980.436
Cu-poor precursor film32.2727.087.4533.210.9350.2160.489
CIGS film selenized from Cu-rich precursor film29.1415.806.7448.321.2930.2990.999
CIGS film selenized from Cu-poor precursor film23.9420.005.5250.550.9380.2161.006

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