Preparation and Characterization of Cu(In,Ga)Se₂ Thin Films by Selenization of Cu_0.8Ga_0.2 and In₂Se₃ Precursor Films

Table 1

Chemical compositions (measured by XRF) of the precursor films and subsequent selenized films at 550°C for 30 min.

Sample	Cu (at%)	In (at%)	Ga (at%)	Se (at%)	[Cu]/[In + Ga]	[Ga]/[In + Ga]	2∗[Se]/([Cu] + 3∗[In + Ga])
Cu-rich precursor film	39.80	21.87	9.29	29.05	1.277	0.298	0.436
Cu-poor precursor film	32.27	27.08	7.45	33.21	0.935	0.216	0.489
CIGS film selenized from Cu-rich precursor film	29.14	15.80	6.74	48.32	1.293	0.299	0.999
CIGS film selenized from Cu-poor precursor film	23.94	20.00	5.52	50.55	0.938	0.216	1.006