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International Journal of Photoenergy
Volume 2012 (2012), Article ID 154704, 6 pages
Research Article

Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells

Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan

Received 16 April 2012; Accepted 13 July 2012

Academic Editor: Raghu N. Bhattacharya

Copyright © 2012 Kai Yang and Masaya Ichimura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new multinary semiconductor Cu2ZnSn S 4 − 𝑥 O 𝑥 (CZTSO), which does not contain toxic elements and expensive rare metals, was fabricated by the electrochemical deposition (ECD) method. CZTSO thin films were deposited onto indium tin oxide (ITO-) coated glass substrates by DC and two-step pulsed ECD from aqueous solutions containing CuSO4, ZnSO4, SnSO4, and Na2S2O3. The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD. The films had band gap energies in a range from 1.5 eV and 2.1 eV. By a photoelectrochemical measurement, it was confirmed that CZTSO films showed p-type conduction and photosensitivity. CZTSO/ZnO heterojunctions exhibited rectification properties in a current-voltage measurement.