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International Journal of Photoenergy
Volume 2012, Article ID 169829, 16 pages
http://dx.doi.org/10.1155/2012/169829
Review Article

Crystal Growth Behaviors of Silicon during Melt Growth Processes

Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

Received 31 August 2011; Accepted 29 December 2011

Academic Editor: Teh Tan

Copyright © 2012 Kozo Fujiwara. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Kozo Fujiwara, “Crystal Growth Behaviors of Silicon during Melt Growth Processes,” International Journal of Photoenergy, vol. 2012, Article ID 169829, 16 pages, 2012. https://doi.org/10.1155/2012/169829.