Review Article

Crystal Growth Behaviors of Silicon during Melt Growth Processes

Figure 7

(a) Growth behavior of two Si crystals when they meet during crystallization. In the underlying crystal, the shapes of the growing interface are different on both sides of the grain boundary indicated by the arrow [41]. (b) Result of EBSP analysis of region observed in (a). The orientation vertical to the grain boundary is shown in color using the inverse pole figure triangle. The grain boundary is also shown in color in accordance with the grain boundary characteristics [41].
169829.fig.007a
(a)
169829.fig.007b
(b)