Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

Table 1

Peak wavelength and XRD FWHM of GaN/InGaN photovoltaic cells with In compositions of 10%, 12%, and 14%.

GaN/InGaN PV cells	In = 10%	In = 12%	In = 14%
λ peak (nm)	393.65	402.34	408.30
FWHM of InGaN film (arcsec)	205.2	198.0	237.6