Research Article

Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

Table 3

The series and shunt resistance of fabricated GaN/InGaN photovoltaic cells with In composition of 10%, 12%, and 14%.

GaN/InGaN PV cellsIn = 10%In = 12%In = 14%

(Ω-cm2)234.84416.81725.45
(Ω-cm2)121.66 3103.08 317.38 3