17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

<table>Electrical characteristics of RIE-textured mc-Si solar cells with various DRE times. (a) Open circuit voltage (<svg height="15.4" id="M17" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 24.575001 15.4" width="24.575001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M257 449q92 0 154 -65t62 -158q0 -112 -67 -175t-150 -63q-98 0 -158.5 66.5t-60.5 154.5q0 59 21 106.5t54.5 75.5t71 43t73.5 15zM244 416q-48 0 -81 -47t-33 -128q0 -96 38 -158t99 -62q51 0 82 43.5t31 139.5q0 91 -36 151.5t-100 60.5z" id="x6F"></path></g><g transform="matrix(.012,-0,0,-.012,18.85,15.187)"><use xlink:href="#x63"></use></g>
</svg>). (b) Short circuit current (<svg height="15.4" id="M18" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 17.674999 15.4" width="17.674999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><use xlink:href="#x1D43C"></use></g>
<g transform="matrix(.012,-0,0,-.012,7.487,15.187)"><use xlink:href="#x73"></use></g><g transform="matrix(.012,-0,0,-.012,11.95,15.187)"><use xlink:href="#x63"></use></g>
</svg>). (c) Fill factor (FF). (d) Conversion efficiency.</table>

International Journal of Photoenergy

fig6

Figure 6

Figure 6: 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching 