International Journal of Photoenergy / 2012 / Article / Fig 1

Research Article

Raman Amplifier Based on Amorphous Silicon Nanoparticles

Figure 1

(a) Cross-sectional TEM bright-field micrograph of Si-rich nitride/amorphous-Si superlattice structure consisting of 10 SRN layers and 9 a-Si layers for a total thickness of 450 nm. (b) Higher magnification of a SRN layer, showing amorphous Si nanocrystals (approximately 2 nm in diameter) marked by arrows.
254946.fig.001

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.