Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

Figure 4

SEM images obtained from (a) as grown and (b) 100°C, (c) 200°C, (d) 300°C, and (e) 400°C annealed, Ag-doped nanostructured CdS thin films.

(a)

(b)

(c)

(d)

(e)