International Journal of Photoenergy / 2012 / Article / Fig 4

Research Article

Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

Figure 4

SEM images obtained from (a) as grown and (b) 100°C, (c) 200°C, (d) 300°C, and (e) 400°C annealed, Ag-doped nanostructured CdS thin films.
264027.fig.004a
(a)
264027.fig.004b
(b)
264027.fig.004c
(c)
264027.fig.004d
(d)
264027.fig.004e
(e)