Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

<table>Average oxygen concentration at the crystal-melt interface and maximum temperature of crucible wall versus crystal length <svg height="11.175" id="M50" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 9.8249998 11.175" width="9.8249998" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><use xlink:href="#x1D43F"></use></g>
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International Journal of Photoenergy

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Figure 9

Figure 9: Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process 