Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

Figure 6

EBSD orientation maps and inverse pole figures of the polysilicon films in normal direction related to various Al oxide thicknesses.

(a) Thickness of Al₂O₃ = 2 nm

(b) Thickness of Al₂O₃ = 4 nm

(c) Thickness of Al₂O₃ =8 nm

(d) Thickness of Al₂O₃ = 12 nm

(e) Thickness of Al₂O₃ = 16 nm

(f) Thickness of Al₂O₃ = 20 nm