Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

Figure 9

SEM images of pc-Si films for samples with various Al oxide layer thicknesses.

(a) Thickness of Al₂O₃ = 4 nm

(b) Thickness of Al₂O₃ = 12 nm

(c) Thickness of Al₂O₃ = 16 nm

(d) Thickness of Al₂O₃ = 20 nm