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International Journal of Photoenergy
Volume 2012 (2012), Article ID 637943, 7 pages
Research Article

Optimised In2S3 Thin Films Deposited by Spray Pyrolysis

1Faculty of Electrical Engineering and Information Technologies, Ss. Cyril and Methodius University, 1000 Skopje, Macedonia
2Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
3Department of Physical Chemistry, Chalmers University of Technology, Kemivagen 10, 41296 Gothenburg, Sweden

Received 29 September 2011; Accepted 28 October 2011

Academic Editor: Yuexiang Li

Copyright © 2012 Hristina Spasevska et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Indium sulphide has been extensively investigated as a component for different kind of photovoltaic devices (organic-inorganic hybrid devices, all inorganic, dye sensitized cells). In this paper, we have optimised the growth conditions of indium sulphide thin films by means of a low cost, versatile deposition technique, like spray pyrolysis. The quality of the deposited films has been characterised by micro-Raman, vis-UV spectroscopy, and atomic force microscopy. Substrate deposition temperature and different postdeposition annealing conditions have been investigated in order to obtain information about the quality of the obtained compound (which crystalline or amorphous phases are present) and the morphology of the deposited films. We have shown that the deposition temperature influences strongly the amount of amorphous phase and the roughness of the indium sulphide films. Optimised postdeposition annealing treatments can strongly improve the final amount of the beta phase almost independently from the percentage of the amorphous phase present in the as deposited films.