Research Article
Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD
Table 1
Various deposition conditions of the nc-Si:H thin films.
| System | Deposition parameter | Experimental conditions |
| PECVD | SiH4 flow rate (sccm) | 4 | H2 flow rate (sccm) | 96 | Substrate | Si wafer, glass | RF power (watt) | 150 | Deposition time (min) | 10, 30, 60, 180, 360 | Working pressure | (Torr) | Background pressure | (Torr) |
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