Research Article
High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process
Table 5
The devices characteristic of different etching depths.
| | Item | (V) | (A) | (mohm) | (ohm) | FF (%) | (%) | (A) |
| | ED0 | 0.634 | 8.86 | 2.39 | 63.47 | 79.72 | 18.74 | 0.49 | | ED3 | 0.636 | 8.88 | 2.36 | 61.21 | 79.73 | 18.84 | 0.52 | | ED6 | 0.640 | 8.93 | 2.23 | 59.81 | 79.75 | 19.07 | 0.55 | | ED9 | 0.638 | 8.91 | 2.37 | 60.65 | 79.74 | 18.97 | 0.59 |
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