Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

Figure 3

RMS as a function of rapid thermal annealing temperature: (a) 750, (b) 850, (c) 900, and (d) 950°C.

(a) 0.796 nm

(b) 0.703 nm

(c) 1.07 nm

(d) 1.98 nm