Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

<table>The illuminated current-voltage (<i>I-V</i>) characteristics of the device at different light intensity sources.</table>

International Journal of Photoenergy

Figure 4: Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications 