Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

<table class="table-group" id="tab5"><tr><td><table class="table"><tr><td class="thead-hr" colspan="4"><hr/></td></tr><tr><td align="left" rowspan="2">Sample</td><td align="center" colspan="2">Diode ideality factor (<svg height="7.9499998" id="M94" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 8.6625004 7.9499998" width="8.6625004" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><use xlink:href="#x1D45B"></use></g>
</svg>)</td><td align="center" rowspan="2">Built-in potential (<svg height="15.4" id="M95" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 22.450001 15.4" width="22.450001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><use xlink:href="#x1D449"></use></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><use xlink:href="#x62"></use></g><g transform="matrix(.012,-0,0,-.012,18.589,15.187)"><use xlink:href="#x69"></use></g>
</svg>)</td></tr><tr><td align="center">Dark <svg height="11.375" id="M96" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 26.2125 11.375" width="26.2125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g><g transform="matrix(.017,-0,0,-.017,7.491,11.112)"><use xlink:href="#x2D"></use></g><g transform="matrix(.017,-0,0,-.017,13.543,11.112)"><use xlink:href="#x1D449"></use></g>
</svg> (scr region)</td><td align="center"><svg height="11.75" id="M97" style="vertical-align:-0.23206pt" version="1.1" viewbox="0 0 30.775 11.75" width="30.775" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.4)"><use xlink:href="#x1D436"></use></g><g transform="matrix(.017,-0,0,-.017,12.047,11.4)"><use xlink:href="#x2D"></use></g><g transform="matrix(.017,-0,0,-.017,18.098,11.4)"><use xlink:href="#x1D449"></use></g>
</svg> (Region II)</td></tr><tr><td align="left" colspan="4"><hr/></td></tr><tr><td align="left">1</td><td align="center">1.87</td><td align="center">1.81</td><td align="center">0.9929</td></tr><tr><td align="left">2</td><td align="center">1.70</td><td align="center">1.69</td><td align="center">1.0529</td></tr><tr><td align="left">3</td><td align="center">1.79</td><td align="center">1.78</td><td align="center">0.9609</td></tr><tr><td align="left">4</td><td align="center">2.04</td><td align="center">1.95</td><td align="center">0.9199</td></tr><tr class="table-tr"><td colspan="4"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

The values of diode ideality factor (<svg height="7.9499998" id="M92" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 8.6625004 7.9499998" width="8.6625004" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M495 86q-46 -47 -87 -72.5t-63 -25.5q-43 0 -16 107l49 210q7 34 8 50.5t-3 21t-13 4.5q-35 0 -109.5 -72.5t-115.5 -140.5q-21 -75 -38 -159q-50 -10 -76 -21l-6 8l84 340q8 35 -4 35q-17 0 -67 -46l-15 26q44 44 85.5 70.5t64.5 26.5q35 0 10 -103l-24 -98h2
q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" id="x1D45B"></path></g>
</svg>) and built-in potential (<svg height="15.4" id="M93" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 22.450001 15.4" width="22.450001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><use xlink:href="#x1D449"></use></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M152 404l81 35q23 10 41 10q81 0 139 -61.5t58 -149.5q0 -107 -74.5 -178.5t-176.5 -71.5q-71 0 -147 36v555q0 48 -9.5 59.5t-56.5 15.5v23q79 10 145 35v-308zM152 374v-258q0 -20 6 -35q7 -19 30 -37t58 -18q63 0 99.5 50t36.5 137q0 82 -43.5 131t-108.5 49
q-44 0 -78 -19z" id="x62"></path></g><g transform="matrix(.012,-0,0,-.012,18.589,15.187)"><path d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" id="x69"></path></g>
</svg>) of solar cell with different diborane flow rate of p-type layers.

International Journal of Photoenergy

tab5

Table 5

Table 5: Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer 