Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,21.0375)">
		<g transform="translate(72,-55.17)">
			<text transform="matrix(1,0,0,-1,-71.95,59.7)">
				<tspan style="font-size: 17.93px; " x="0" y="0">H</tspan>
				<tspan style="font-size: 17.93px; " x="12.947626" y="0">f</tspan>
				<tspan style="font-size: 17.93px; " x="18.919315" y="0">O</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-40.08,55.22)">
				<tspan style="font-size: 12.55px; " x="0" y="0">2</tspan>
			</text>

		</g>
	</g>
</svg>-Gated Metal-Oxide-Semiconductor Devices

<table>Barrier height versus ideality factor of the Al/HfO<sub>2</sub>/p-Si (MOS) structure at various temperatures.</table>

International Journal of Photoenergy

fig5

Figure 5

Figure 5: Current Mechanism in <svg style="vertical-align:-4.50008pt;width:48.424999px;" id="M1" height="21.0375" version="1.1" viewBox="0 0 48.424999 21.0375" width="48.424999"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,21.0375)">
		<g transform="translate(72,-55.17)">
			<text transform="matrix(1,0,0,-1,-71.95,59.7)">
				<tspan style="font-size: 17.93px; " x="0" y="0">H</tspan>
				<tspan style="font-size: 17.93px; " x="12.947626" y="0">f</tspan>
				<tspan style="font-size: 17.93px; " x="18.919315" y="0">O</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-40.08,55.22)">
				<tspan style="font-size: 12.55px; " x="0" y="0">2</tspan>
			</text>

		</g>
	</g>
</svg>-Gated Metal-Oxide-Semiconductor Devices 

International Journal of Photoenergy

Current Mechanism in H f O 2 -Gated Metal-Oxide-Semiconductor Devices

Figure 5

Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices