Journals
Publish with us
Publishing partnerships
About us
Blog
International Journal of Photoenergy
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
International Journal of Photoenergy
/
2012
/
Article
/
Fig 5
/
Research Article
Current Mechanism in
H
f
O
2
-Gated Metal-Oxide-Semiconductor Devices
Figure 5
Barrier height versus ideality factor of the Al/HfO
2
/p-Si (MOS) structure at various temperatures.