Research Article
Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices
Table 1
The
,
,
, and
values for the investigated device structure of Figure
3.
| | T (K) | n | (A/cm2) | (eV) |
| | 100 | 4.32 | 5.50 × 10−06 | 0.172 | | 120 | 3.98 | 7.36 × 10−06 | 0.213 | | 140 | 3.57 | 9.35 × 10−06 | 0.249 | | 160 | 3.32 | 1.40 × 10−05 | 0.283 | | 180 | 2.98 | 1.96 × 10−05 | 0.316 | | 200 | 2.64 | 3.04 × 10−05 | 0.347 | | 220 | 2.36 | 6.64 × 10−05 | 0.371 | | 240 | 2.11 | 1.28 × 10−05 | 0.395 | | 260 | 1.84 | 2.67 × 10−05 | 0.415 | | 280 | 1.52 | 3.49 × 10−05 | 0.443 | | 300 | 1.38 | 4.62 × 10−05 | 0.472 | | 320 | 1.24 | 7.12 × 10−05 | 0.516 |
|
|
